| PART |
Description |
Maker |
| V58C365164S |
64 Mbit DDR SDRAM 4M X 16/ 3.3VOLT
|
Mosel Vitelic Corp
|
| ACT-S512K32V-045P7T ACT-S512K32V-045P7Q ACT-S512K3 |
ACT-S512K32V High Speed 3.3Volt 16 Megabit SRAM Multichip Module
CURRENT INDICATOR GREEN WIRE MNT
TRANSF CURRENT .50 OPENING PCB
KPSE 3C 3#16 SKT PLUG
LENS, ROUND, GREEN; Colour:Green RoHS Compliant: Yes
CURRENT INDICATOR AMBER WIRE MNT
Dual 2-Line To 4-Line Decoders/Demultiplexers 16-SO 0 to 70
Dual 2-Line to 4-Line Decoders/Demultiplexers with Open-Collector Outputs 16-PDIP 0 to 70
Dual 2-Line To 4-Line Decoders/Demultiplexers 16-PDIP 0 to 70
ACT-S512K32V High Speed 3.3Volt 16 Megabit SRAM Multichip Module 行为S512K32V高.3Volt 16兆位SRAM的多芯片模块
CURRENT INDICATOR BLUE WIRE MNT 行为S512K32V高3.3Volt 16兆位SRAM的多芯片模块
ACT-S512K32V High Speed 3.3Volt 16 Megabit SRAM Multichip Module 行为S512K32V高3.3Volt 16兆位SRAM的多芯片模块
Dual 2-Line to 4-Line Decoders/Demultiplexers with Open-Collector Outputs 16-SOIC 0 to 70 行为S512K32V高.3Volt 16兆位SRAM的多芯片模块
CURRENT INDICATOR RED WIRE MNT 行为S512K32V高.3Volt 16兆位SRAM的多芯片模块
|
AEROFLEX[Aeroflex Circuit Technology]
Aeroflex Inc.
Aeroflex, Inc.
|
| TC58FVT160AXB-70 TC58FVB160AXB-70 TC58FVB160AFT-70 |
TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS
16-MBIT (2M 8 BITS / 1M 16 BITS) CMOS FLASH MEMORY
16-MBIT (2Mx8 BITS/1Mx16 BITS) CMOS FLASH MEMORY
|
Toshiba Corporation
|
| HSDL-3210 |
IrDACompliant Low Power 1.15 Mbit/s Infrared Transceiver 红外㈢符合低功.15 Mbit / s的红外收发器
|
Avago Technologies, Ltd.
|
| HY29LV160 HY29LV160BF-12 HY29LV160BF-12I HY29LV160 |
IC,EEPROM,NOR FLASH,1MX16/2MX8,CMOS,TSSOP,48PIN,PLASTIC
16 Mbit (2M x 8/1M x 16) Low Voltage Flash Memory
|
HYNIX[Hynix Semiconductor]
|
| AM42DL16X2D |
16 Mbit (2 M x 8-Bit/1 M x 16-Bit) CMOS and 2 Mbit (128 K x 16-Bit) Static RAM (Preliminary)
From old datasheet system
|
AMD Inc
|
| AT25DF021-MH-T AT25DF021-MH-Y AT25DF021-MHF-Y AT25 |
2-Megabit 2.3Volt or 2.7-Volt Minimum SPI Serial Falsh Memory
|
List of Unclassifed Manufacturers
List of Unclassifed Man...
|
| TC58512FT |
TENTATIVE TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 马鞍山暂定东芝数字集成电路硅栅CMOS
512-MBIT (64M x 8 BITS) CMOS NAND E2PROM
|
Toshiba, Corp.
|
| M29W064FB70N3E M29W064FB70N3F M29W064FT90N3E M29W0 |
64 Mbit (8 Mbit x 8 or 4 Mbit x 16, page, boot block) 3 V supply Flash memory
|
Numonyx B.V
|
| SST37VF512 |
(SST37VFxxx) 512 Kbit / 1 Mbit / 2 Mbit / 4 Mbit (x8) Many-Time Programmable Flash
|
Silicon Storage Technology
|
| NAND01G-A NAND01GW3A NAND01GW3A0AN6 |
128 Mbit, 256 Mbit, 512 Mbit, 1 Gbit (x8/x16) 528 Byte/264 Word Page, 1.8V/3V, NAND Flash Memories
|
STMicroelectronics
|
